| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2025 | 49 | WO/2025/248802 | DEVICE FOR PRODUCING SINGLE-CRYSTAL SHEET, AND SINGLE-CRYSTAL SHEET | JP2024/031023 | C30B 15/36 | CRYSTAL SYSTEMS CORPORATION | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/248803 | APPARATUS FOR MANUFACTURING THIN PLATE-LIKE SINGLE CRYSTAL, AND THIN PLATE-LIKE SINGLE CRYSTAL | JP2024/031024 | C30B 15/36 | CRYSTAL SYSTEMS CORPORATION | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/249355 | SiC SINGLE CRYSTAL WAFER, SiC SINGLE CRYSTAL INGOT, METHOD FOR PRODUCING SiC SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SiC SINGLE CRYSTAL INGOT, SiC SINGLE CRYSTAL INGOT PRODUCTION DEVICE, AND METHOD FOR FORMING FILM FORMED BY SiC EPITAXIAL GROWTH | JP2025/018874 | C30B 29/36 | CENTRAL GLASS COMPANY, LIMITED | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/249524 | METHOD FOR PRODUCING SILICON CARBIDE WAFER | JP2025/019531 | C30B 29/36 | DENSO CORPORATION | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/250071 | GROWTH CHAMBER AND METHOD FOR CRYSTAL GROWTH BY SUBLIMATION | SE2025/050516 | C30B 23/00 | XTAL.WORKS SWEDEN AB | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/250072 | GROWTH CHAMBER AND METHOD FOR CRYSTAL GROWTH BY SUBLIMATION | SE2025/050517 | C30B 23/00 | XTAL.WORKS SWEDEN AB | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/250905 | APPARATUS AND METHOD FOR GROWTH OF GALLIUM OXIDE CRYSTAL WITH AN OFFCUT | US2025/031598 | C30B 29/16 | LUXIUM SOLUTIONS, LLC | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2025 | 49 | WO/2025/250928 | APPARATUS AND METHOD FOR GROWTH OF GALLIUM OXIDE CRYSTAL | US2025/031636 | C30B 15/34 | LUXIUM SOLUTIONS, LLC | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی |